| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor device capable of suppressing the variations in the threshold of the nonvolatile semiconductor device provided with assist gates. <P>SOLUTION: A nonvolatile semiconductor device is provided with a semiconductor substrate 21 having a main surface; first assist gates 12b and 12d formed on the main surface of the semiconductor substrate 21, extending toward one direction, and capable of supplying electrons into the semiconductor substrate 21; second assist gates 12a, 12c and 12e formed on the main surface of the semiconductor substrate 21, extending along the first assist gates 12b and 12d, and capable of impressing a predetermined voltage on the semiconductor substrate 21; floating gates 13a, 13b, 13c and 13d arranged between the first assist gates 12b, 12d and the second assist gates 12a, 12c and 12e, and capable of storing electrons; and a conductive layer for the first assist gates connecting the first assist gates 12b and 12d and the semiconductor substrate 21, and forming a potential barrier between the semiconductor substrate 21 and the first assist gates 12b and 12d. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
