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发明名称
封装级结构之积体电容、其制程、与包含有该电容之系统
摘要
一物件包含内藏于防焊膜中之顶电极。一物件包含在核心结构上之顶电极。用以形成顶电极之制程包含减少该防焊膜之厚度并在该减少厚度之防焊膜上形成该顶电极。用以形成该顶电极之制程包含在高K介电层上形成顶电极,该介电层系在该核心结构的图案化部份中。
申请公布号
TW200733161
申请公布日期
2007.09.01
申请号
TW095147934
申请日期
2006.12.20
申请人
英特尔股份有限公司
发明人
唐约翰;曾辛寅;何珍魁;海汀
分类号
H01G9/10(2006.01)
主分类号
H01G9/10(2006.01)
代理机构
代理人
林志刚
主权项
地址
美国
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