| 摘要 |
A method for manufacturing a semiconductor device is provided to improve an adhesive strength of a metal layer within a trench by forming a damascene pattern having a low-k dielectric layer, and forming a spacer. A first insulating layer(102), a low-k dielectric layer(104), a second insulating layer(106) and a hard mask are formed on a semiconductor substrate(100). A trench(112) is formed by etching the hard mask, the second insulating layer and the low-k dielectric layer. A spacer(114) is formed at a sidewall of the trench. A diffusion barrier(116) is formed on the entire structure including the spacer. A metal layer is formed on the diffusion barrier to fill the trench, and then the metal layer is flattened.
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