| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a read-only once memory device which is simple in structure and makes its non-destructive analysis difficult. <P>SOLUTION: The memory device consists of a plurality of memory elements arranged in an array structure. Each of the memory elements (1) consists of a conductive nano-wire (11) and a metal electrode (12) having a current density resistance lower than that of the conductive nano-wire. At least one end of the conductive nano-wire is bonded to the metal electrode, forming a joint (13) which can be disconnected by application of pulse current for writing or reading. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
