| 摘要 |
USING A HELIUM CRYOSTAT, THE TEMPERATURE FOR A SUBSTRATE WAFER(S) IS REDUCED TO - 270.95 �C (2.2 KELVIN) FOR TWENTY-FOUR HOURS. A SOAK SEGMENT WILL HOLD THE TEMPERATURE OF THE SUBSTRATE WAFER AT -270.95 �C (2.2 KELVIN) FOR NINETY-SIX HOURS. AT SUCH TEMPERATURES, ALLOYS SUCH AS GaAS, InP, AND GaP WILL FORM DIPOLE MOLECULAR MOMENTS, WHICH WILL RE-ALIGN ALONG LINES OF INTERNAL MAGNETIC FORCE AS MOLECULAR BONDS CONDENSE. THE SUBSTRATE WAFER?S TEMPERATURE IS RAMPED UP TO ROOM TEMPERATURE OVER TWENTY-FOUR HOURS. THE TEMPERATURE OF THE SUBSTRATE WAFER IS RAMPED UP TO ASSURE THAT THE TEMPERATURE GRADIENTS MADE TO OCCUR WITHIN THE WAFER ARE KEPT LOW. TYPICALLY, A TEMPER RAMP UP TEMPERATURE WILL RANGE BETWEEN 148.89 �C TO 593.33 �C (300 OF TO 1100�F) AND DEPENDS UPON THE SINGLE CRYSTAL MATERIAL USED TO CONSTRUCT THE SUBSTRATE WAFER. THE SUBSTRATE WAFER UNDERGOES A TEMPER HOLD SEGMENT, WHICH ASSURES THAT THE ENTIRE SUBSTRATE WAFER HAS HAD THE BENEFIT OF THE TEMPERING TEMPERATURE. |
