发明名称 |
Semiconductor device manufacturing apparatus and method for manufacturing semiconductor device |
摘要 |
A semiconductor device manufacturing method is provided. First and second semiconductor chips are prepared, including first and second electrodes on first and second surfaces respectively. The second semiconductor chip includes a third electrode on a third surface opposite to the second surface. The third electrode overlaps the second electrode. The second surface includes an electrode-free region that is free of any electrode. A sealing resin is applied on the first surface of the first semiconductor chip. A second surface of the first semiconductor chip is held by a bonding tool including a pressing surface and a supporting-portion projected from the pressing surface. The pressing surface is made into contact with the second electrode. The supporting-portion is arranged at a position facing the electrode-free region. The second semiconductor chip is stacked over the first semiconductor chip by the bonding tool to electrically connect the third electrode to the first electrode. |
申请公布号 |
US8617923(B2) |
申请公布日期 |
2013.12.31 |
申请号 |
US201213438482 |
申请日期 |
2012.04.03 |
申请人 |
KOYANAGI TADASHI;ELPIDA MEMORY, INC. |
发明人 |
KOYANAGI TADASHI |
分类号 |
H01L21/58 |
主分类号 |
H01L21/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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