发明名称 Semiconductor device manufacturing apparatus and method for manufacturing semiconductor device
摘要 A semiconductor device manufacturing method is provided. First and second semiconductor chips are prepared, including first and second electrodes on first and second surfaces respectively. The second semiconductor chip includes a third electrode on a third surface opposite to the second surface. The third electrode overlaps the second electrode. The second surface includes an electrode-free region that is free of any electrode. A sealing resin is applied on the first surface of the first semiconductor chip. A second surface of the first semiconductor chip is held by a bonding tool including a pressing surface and a supporting-portion projected from the pressing surface. The pressing surface is made into contact with the second electrode. The supporting-portion is arranged at a position facing the electrode-free region. The second semiconductor chip is stacked over the first semiconductor chip by the bonding tool to electrically connect the third electrode to the first electrode.
申请公布号 US8617923(B2) 申请公布日期 2013.12.31
申请号 US201213438482 申请日期 2012.04.03
申请人 KOYANAGI TADASHI;ELPIDA MEMORY, INC. 发明人 KOYANAGI TADASHI
分类号 H01L21/58 主分类号 H01L21/58
代理机构 代理人
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