发明名称 |
Interconnect sensor for detecting delamination |
摘要 |
An interconnect sensor for detecting delamination due to coefficient of thermal expansion mismatch and/or mechanical stress. The sensor comprises a conductive path that includes a via disposed between two back end of line metal layers separated by a dielectric. The via is coupled between a first probe structure and a second probe structure and mechanically coupled to a stress inducing structure. The via is configured to alter the conductive path in response to mechanical stress caused by the stress inducing structure. The stress inducing structure can be a through silicon via or a solder ball. The dielectric material can be a low-k dielectric material. In another embodiment, a method of forming an interconnect sensor is provided for detecting delamination. |
申请公布号 |
US8618539(B2) |
申请公布日期 |
2013.12.31 |
申请号 |
US20090613444 |
申请日期 |
2009.11.05 |
申请人 |
HENDERSON BRIAN MATTHEW;GU SHIQUN;MOGUL HOMYAR C.;NAKAMOTO MARK M.;CHANDRASEKARAN ARVIND;QUALCOMM INCORPORATED |
发明人 |
HENDERSON BRIAN MATTHEW;GU SHIQUN;MOGUL HOMYAR C.;NAKAMOTO MARK M.;CHANDRASEKARAN ARVIND |
分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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