发明名称 GAS SENSOR COMPRISING METAL NANONETWORK LAYER
摘要 The present invention relates to a gas sensor including a metal nanonetwork layer. The gas sensor according to the present invention comprises: a substrate; a semiconductor layer formed on the substrate; a metal nanonetwork layer which is formed on a part of the semiconductor layer and changes the amount of electric charge in the semiconductor layer by reacting with a gas to be detected; a first electrode which is formed on the semiconductor layer on which the metal nanonetwork layer is not formed and separated from the metal nanonetwork layer; and a second gas sensor which is formed on the metal nanonetwork in order to come into contact with a part of the metal nanonetwork layer. The gas sensor according to the present invention uses the metal nanonetwork layer as a gas detecting substance, thereby having a wide area in which the gas sensor comes into contact with a gas to be detected. Therefore, the gas sensor according to the present invention can react with a larger amount of a gas at the same time and change in electrical conductivity increases, as a result, the sensitivity of the gas sensor can be improved.
申请公布号 KR20130142487(A) 申请公布日期 2013.12.30
申请号 KR20120065743 申请日期 2012.06.19
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, DANKOOKUNIVERSITY 发明人 JANG, SOO HWAN;KIM, HYON WOONG
分类号 G01N27/12 主分类号 G01N27/12
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