发明名称 |
GAS SENSOR COMPRISING METAL NANONETWORK LAYER |
摘要 |
The present invention relates to a gas sensor including a metal nanonetwork layer. The gas sensor according to the present invention comprises: a substrate; a semiconductor layer formed on the substrate; a metal nanonetwork layer which is formed on a part of the semiconductor layer and changes the amount of electric charge in the semiconductor layer by reacting with a gas to be detected; a first electrode which is formed on the semiconductor layer on which the metal nanonetwork layer is not formed and separated from the metal nanonetwork layer; and a second gas sensor which is formed on the metal nanonetwork in order to come into contact with a part of the metal nanonetwork layer. The gas sensor according to the present invention uses the metal nanonetwork layer as a gas detecting substance, thereby having a wide area in which the gas sensor comes into contact with a gas to be detected. Therefore, the gas sensor according to the present invention can react with a larger amount of a gas at the same time and change in electrical conductivity increases, as a result, the sensitivity of the gas sensor can be improved. |
申请公布号 |
KR20130142487(A) |
申请公布日期 |
2013.12.30 |
申请号 |
KR20120065743 |
申请日期 |
2012.06.19 |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, DANKOOKUNIVERSITY |
发明人 |
JANG, SOO HWAN;KIM, HYON WOONG |
分类号 |
G01N27/12 |
主分类号 |
G01N27/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|