NON-VOLATILE MEMORY DEVICE

摘要

The present invention relates to a non-volatile memory device. A non-volatile memory device of the present invention comprises: a memory cell array including a plurality of memory cells; a page buffer circuit which is connected to the memory cell array through a plurality of bit lines, and selectively pre-charges the plurality of bit lines; and control logic which controls the page buffer circuit such that pre-charge voltage can be applied to selected bit lines among the plurality of bit lines during first time in a read operation, and controls the page buffer circuit such that pre-charge voltage can be applied to selected bit lines among the plurality of bit lines during second time different from the first time in a verification read operation, wherein the second time is provided based on the number of the selected bit lines among the plurality of bit lines in the verification read operation. Accordingly, the non-volatile memory device of the present invention can reduce program time by controlling the pre-charge time of program verification voltage.