发明名称 DOUBLE LAYER INTERLEAVED P-N DIODE MODULATOR
摘要 <p>A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion.</p>
申请公布号 CA2874264(A1) 申请公布日期 2013.12.27
申请号 CA20132874264 申请日期 2013.04.16
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 GREEN, WILLIAM M.;ROSENBERG, JESSIE C.;VLASOV, YURII A.
分类号 G02F1/015;H01L21/329 主分类号 G02F1/015
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