发明名称 |
ATOMIC LAYER DEPOSITION WITH RAPID THERMAL TREATMENT |
摘要 |
<p>Provided are methods and apparatus for atomic layer deposition of a film with rapid thermal treatment. Methods described can be used to convert an amorphous film to form an epitaxial film with rapid thermal treatment or to selectively deposit a film on a portion of a substrate. A thermal element in the apparatus is capable of globally or locally changing the temperature of the amorphous film or a portion of the amorphous film by temporarily rapidly raising the temperature of the amorphous film converting the film to an epitaxial film.</p> |
申请公布号 |
WO2013192295(A1) |
申请公布日期 |
2013.12.27 |
申请号 |
WO2013US46536 |
申请日期 |
2013.06.19 |
申请人 |
APPLIED MATERIALS, INC.;YE, ZHIYUAN |
发明人 |
YE, ZHIYUAN |
分类号 |
C23C16/44;C23C16/448 |
主分类号 |
C23C16/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|