METHOD FOR MANUFACTURING NANO ELECTRONIC DEVICE

摘要

The present invention relates to a method for manufacturing a nanoelectronic device, comprising: a step of sequentially forming a metal layer and a first oxide layer on a substrate with a semiconductor device and coating the substrate with a hardening resin; a step of performing an imprint process by pressing the resin-coated substrate with a stamp and exposing the substrate to UV; a step of separating the stamp from the resin after the imprint process; a step of dry etching the first oxide layer and the metal layer using the pattern on the resin as a hard mask; a step of removing the remaining resin and passivating the substrate with a second oxide layer after the dry etching process; and a step of flattening the second oxide layer using a CMP process and performing a dicing process.