| 摘要 |
<p>Provided is a method for production of a semiconductor device, the method employing a developing mechanism, a heating mechanism for performing a heating process of a substrate subsequent to exposure but prior to development, a plurality of etching mechanisms, and a transport mechanism, wherein the method is provided with: a step in which, subsequent to an etching process, the pattern dimensions of an etched layer are measured at multiple points, and heating parameter data for minimizing deviations in pattern dimensions is derived for each of the etching mechanisms, and stored in a data storage means; a step in which, during the heat process of a substrate by the heating mechanism, transport scheduling information is acquired, and a process-executing etching mechanism for carrying out the etching process on the substrate in question is designated from among the etching mechanisms; a step in which heating parameter data for the process-executing etching mechanism is acquired from the data storage means; and a step in which the heating temperature in each of the heating zones is controlled on the basis of the acquired heating parameter data.</p> |
