EPITAXIAL GROWTH OF SMOOTH AND HIGHLY STRAINED GERMANIUM
摘要
<p>A smooth germanium layer which can be grown directly on a silicon semiconductor substrate by exposing the substrate to germanium precursor in the presence of phosphine at temperature of about 350C. The germanium layer formation can be achieved with or without a SiGe seed layer. The process to form the germanium layer can be integrated into standard CMOS processing to efficiently form a structure embodying a thin, highly strained germanium layer. Such structure can enable processing flexibility. The germanium layer can also provide unique physical properties such as in an opto-electronic devices, or to enable formation of a layer of group lll-V material on a silicon substrate.</p>
申请公布号
WO2013192119(A1)
申请公布日期
2013.12.27
申请号
WO2013US46210
申请日期
2013.06.18
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
REZNICEK, ALEXANDER;ADAM, THOMAS, N.;BEDELL, STEPHEN, W.;FOGEL, KEITH, E.;SADANA, DEVENDRA, K.