STACKED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a stacked semiconductor device that includes: a first complementary semiconductor device (100) in which a CMOS circuit and a wiring layer are formed on a semiconductor substrate (110); metal electrodes (141, 142) that are formed on the first complementary semiconductor device (100) together with a wiring layer; semiconductor layers (231, 232) that are formed on the metal electrodes (141, 142) with an insulating film (220) being interposed therebetween, that are separately formed in an nMOS area and a pMOS area, and that contain Ge as a principal component; and a second complementary semiconductor device (200) in which an nMOSFET is formed in the semiconductor layer in the nMOS area and a pMOSFET is formed in the semiconductor layer in the pMOS area.