| 发明名称 |
METHOD TO CONTROL INTERNAL QUANTUM OUTPUT OF SEMICONDUCTOR LIGHT DIODE HETEROSTRUCTURES BASED ON GaN |
| 摘要 |
FIELD: measurement equipment.SUBSTANCE: method includes radiation of a light-emitting semiconductor heterostructure by a beam of electrons and excitation of cathode luminescence, besides, excitation of cathode luminescence is carried out by radiation in a pulse mode with pulse duration from 10 ns to 400 ns. Energy of electrons is provided preferably as 18 keV and higher.EFFECT: reduced impact of heterogeneity of ionisation losses and elimination of deterioration of active layers of semiconductor light diode heterostructures during measurements.2 dwg |
| 申请公布号 |
RU2503024(C2) |
申请公布日期 |
2013.12.27 |
| 申请号 |
RU20120112682 |
申请日期 |
2012.04.03 |
| 申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "NATSIONAL'NYJ ISSLEDOVATEL'SKIJ TOMSKIJGOSUDARSTVENNYJ UNIVERSITET" (TGU) |
发明人 |
PRUDAEV IL'JA ANATOL'EVICH;OLESHKO VLADIMIR IVANOVICH;KOREPANOV VLADIMIR IVANOVICH;LISITSYN VIKTOR MIKHAJLOVICH;TOLBANOV OLEG PETROVICH;IVONIN IVAN VARFOLOMEEVICH |
| 分类号 |
G01R31/26;H01J37/04;H01S5/00 |
主分类号 |
G01R31/26 |
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