| 摘要 |
FIELD: physics; conductors. ^ SUBSTANCE: semiconductor multijunction solar cell includes a substrate on which there are at least two interfaced double-layer In1-xGaxN components with p-n or n-p junctions between the layers, interfaced through a tunnel junction or ohmic contact, where the band gap of the components increases towards the source of solar energy. According to the invention, the solar cell has an additional double-layer component, made from In1-x-yGaxAlyN with p-n or n-p junctions between the layers, placed on the side of the source of solar energy, interfaced with the adjacent double-layer component made from In1-xGaxN through a tunnel junction or ohmic contact. ^ EFFECT: invention increases efficiency of converting solar radiation into electrical energy. ^ 2 cl, 1 dwg |
