发明名称 FinFET with Body Contact
摘要 A semiconductor device has a FinFET with at least two independently controllable FETs on a single fin. The fin may have a body area with a width between two vertical sides, each side has a single FET. The fin also may have a top fin area that is wider than the body area and is electrically independent from the two FETs. The top fin area may be capable of receiving a body contact structure which may be connected to an electrical conductor as to regulate the voltage in the body area of the fin.
申请公布号 US2013341724(A1) 申请公布日期 2013.12.26
申请号 US201213532311 申请日期 2012.06.25
申请人 ERICKSON KARL R.;PAONE PHIL C.;PAULSEN DAVID P.;SHEETS JOHN E.;UHLMANN GREGORY J.;WILLIAMS KELLY L.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ERICKSON KARL R.;PAONE PHIL C.;PAULSEN DAVID P.;SHEETS JOHN E.;UHLMANN GREGORY J.;WILLIAMS KELLY L.
分类号 H01L27/088;H01L21/8234 主分类号 H01L27/088
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