| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for processing a wafer and a laser processing device, capable of forming a modified layer under appropriate processing conditions in response to the impurity added to the wafer.SOLUTION: A method for processing a wafer includes: a modified layer for inspection formation step of forming a modified layer 110 for inspection by irradiating a street or the inside of an outer peripheral excess region surrounding a device region in which a device is formed with a laser beam of a wavelength having permeability to the wafer; a modified layer check step of irradiating the wafer in which the modified layer 110 for inspection is formed with a beam of a wavelength having permeability to the wafer and checking the size of the modified layer and the position at which the modified layer is formed on the basis of the beam which penetrated the wafer and was reflected; a processing condition setting step of setting processing conditions on the basis of the size of the modified layer and the position at which the modified layer is formed; and a modified layer formation step of forming a modified layer by positioning a condensing point of the laser beam set in the processing condition setting step inside the wafer and irradiating the wafer with the laser beam along the street. |
