| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device.SOLUTION: A semiconductor device comprises: a lateral diffusion MISFET having a gate electrode G, a source region and a drain region; a source plug P1S which is arranged in a first region located on one side of the gate electrode G and electrically connected to the source region; and source wiring M1S. The source wiring M1S includes: field plate parts FP extending at an end on the gate electrode G side over an upside of the gate electrode G to an upside on the drain region side; and a notched part N. By providing the field plate parts FP, capacitance (Cgd) between the gate electrode G and the drain region can be reduced. Further, by providing the notched part N, capacitance (Cgs) between the gate electrode G and the source region can be reduced. In addition, Cgd and Cgs can be adjusted. |
