发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To facilitate the manufacturing of a semiconductor device.SOLUTION: A protection chip 5ZA, in which a surface structure type Zener diode protecting a light emitting chip provided with an LED from surge voltage is formed, is mounted on wiring 3b which an anode electrode 5A connected with a p type semiconductor region 5p having the same conductive type as a semiconductor substrate 5s of the protection chip 5ZA is electrically connected through a metal wire 6c. In this case, the anode electrode 5A of the protection chip 5ZA is electrically connected with a rear surface of the protection chip 5ZA without disposing a pn junction therebetween. Thus, even if the rear surface of the protection chip 5ZA contacts with the wiring 3b, problems do not occur in electric characteristics of the Zener diode of the protection chip 5ZA. Therefore, it is not necessary to form an insulation film on the rear surface of the protection chip 5ZA for preventing the rear surface of the protection chip 5ZA from contacting with the wiring 3b, and thus the manufacturing of a semiconductor device is facilitated.
申请公布号 JP2013258361(A) 申请公布日期 2013.12.26
申请号 JP20120134796 申请日期 2012.06.14
申请人 RENESAS ELECTRONICS CORP 发明人 NIIDE AKIRA;YAMADA SHINICHI;ICHINOSE YASUJI;NOZAWA TOSHIYA
分类号 H01L33/48;H01L33/00 主分类号 H01L33/48
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