发明名称 |
SEMICONDUCTOR HOLE STRUCTURE |
摘要 |
A semiconductor device has a first layer formed on a substrate. A mask layer is formed and patterned above the first layer. The first layer is etched partially through. A second layer is formed over the first layer. The first and second layers are etched by a non-lithography process. |
申请公布号 |
US2013341762(A1) |
申请公布日期 |
2013.12.26 |
申请号 |
US201213527931 |
申请日期 |
2012.06.20 |
申请人 |
CHIU YUAN-CHIEH;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHIU YUAN-CHIEH |
分类号 |
H01L23/48;H01L21/302 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|