发明名称 SEMICONDUCTOR HOLE STRUCTURE
摘要 A semiconductor device has a first layer formed on a substrate. A mask layer is formed and patterned above the first layer. The first layer is etched partially through. A second layer is formed over the first layer. The first and second layers are etched by a non-lithography process.
申请公布号 US2013341762(A1) 申请公布日期 2013.12.26
申请号 US201213527931 申请日期 2012.06.20
申请人 CHIU YUAN-CHIEH;MACRONIX INTERNATIONAL CO., LTD. 发明人 CHIU YUAN-CHIEH
分类号 H01L23/48;H01L21/302 主分类号 H01L23/48
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