HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS

摘要

Provided are a heat treatment method and a heat processing device capable of promoting the crystallization of a high dielectric constant film and improving an interfacial property of the high dielectric constant film. The present invention is provided to irradiate flash light to the surface of a semiconductor wafer which a gate of the high dielectric constant film is formed and heat the surface at T2 which is a target temperature, thereby preventing the growth of a silica film and promoting the crystallization of the high dielectric constant film. The present invention maintains a T3 temperature by irradiating light from a halogen lamp to the semiconductor wafer after heating the flash light. An annealing process after heating the flash light is processed in a mixed gas between a hydrogen gas and a nitrogen gas. The present invention improves the interfacial property of the high dielectric constant film by performing the annealing process in the mixed gas and reducing the defect of the interface of the high dielectric constant film with hydrogen termination. [Reference numerals] (AA) Surface temperature (°C);(BB) Time