发明名称 MAGNETIC RANDOM ACCESS MEMORY
摘要 A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.
申请公布号 US2013341744(A1) 申请公布日期 2013.12.26
申请号 US201314011094 申请日期 2013.08.27
申请人 NEC CORPORATION 发明人 ISHIWATA NOBUYUKI;NUMATA HIDEAKI;OHSHIMA NORIKAZU
分类号 H01L43/02 主分类号 H01L43/02
代理机构 代理人
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