发明名称 |
PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION USED FOR THE METHOD, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method exhibiting excellence in local critical dimension uniformity (local CDU, nm) and exposure latitude (EL) and remarkably reducing generation of scum in a process of forming a fine pattern such as a hole pattern having a hole diameter of 45 nm or less by use of an organic developing solution, and to provide an actinic ray-sensitive or radiation-sensitive resin composition used for the method, a resist film, a method for manufacturing an electronic device using the above pattern forming method, and an electronic device.SOLUTION: A pattern forming method includes steps of: (1) forming a film of an actinic ray-sensitive or radiation-sensitive resin composition containing the following components (A) to (C); (2) exposing the film; and (3) forming a negative pattern by developing the exposed film by use of a developing solution containing an organic solvent. The resin composition contains: (A) a resin showing an increase in the polarity by an action of an acid to decrease the solubility with a developing solution containing an organic solvent; (B) a compound generating an acid by irradiation with actinic rays or radiation; and (C) a salt that has a conjugate base structure having a pKa of -2 or higher in the molecule and is substantially not decomposed by actinic rays or radiation. |
申请公布号 |
JP2013257468(A) |
申请公布日期 |
2013.12.26 |
申请号 |
JP20120134190 |
申请日期 |
2012.06.13 |
申请人 |
FUJIFILM CORP |
发明人 |
YAMAGUCHI SHUHEI |
分类号 |
G03F7/004;C08F220/28;G03F7/038;G03F7/039;G03F7/32;H01L21/027 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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