SEMICONDUCTOR DEVICE

摘要

A MOSFET (100) includes a silicon carbide substrate (1) including a main surface (1A) having an off angle of not less than 50° and not more than 65° with respect to a {0001} plane, a buffer layer (2) and a drift layer (3) formed on the main surface (1A), a gate oxide film (91) formed on and in contact with the drift layer (3), and a p type body region (4) of a p conductivity type formed in the drift layer (3) to include a region in contact with the gate oxide film (91). The p type body region (4) has a p type impurity density of not less than 5 × 10 16 cm -3