发明名称
摘要 <p>A semiconductor component comprising a substrate with a first side and a second side a multi-layer contact structure arranged on at least one side of the substrate, the contact structure exhibiting a barrier layer to prevent the diffusion of ions from the side of barrier layer opposite to the substrate into the substrate.</p>
申请公布号 JP5377478(B2) 申请公布日期 2013.12.25
申请号 JP20100515368 申请日期 2008.06.19
申请人 发明人
分类号 H01L31/04;H01L21/28 主分类号 H01L31/04
代理机构 代理人
主权项
地址