发明名称 |
SUBSTRATE CONTACT FOR A CAPPED MEMS AND METHOD OF MAKING THE SUBSTRATE CONTACT AT THE WAFER LEVEL |
摘要 |
A MEMS device ( 100 ) is provided that includes a handle layer ( 108 ) having a sidewall ( 138 ), a cap ( 132 ) overlying said handle layer ( 108 ), said cap ( 132 ) having a sidewall ( 138 ), and a conductive material ( 136 ) disposed on at least a portion of said sidewall of said cap ( 138 ) and said sidewall of said handle layer ( 138 ) to thereby electrically couple said handle layer ( 108 ) to said cap ( 132 ). A wafer-level method for manufacturing the MEMS device from a substrate ( 300 ) comprising a handle layer ( 108 ) and a cap ( 132 ) overlying the handle layer ( 108 ) is also provided. The method includes making a first cut through the cap ( 132 ) and at least a portion of the substrate ( 300 ) to form a first sidewall ( 138 ), and depositing a conductive material ( 136 ) onto the first sidewall ( 138 ) to electrically couple the cap ( 132 ) to the substrate ( 300 ). |
申请公布号 |
EP1897122(A4) |
申请公布日期 |
2013.12.25 |
申请号 |
EP20060773131 |
申请日期 |
2006.06.13 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
HOOPER, STEPHEN R.;DESAI, HEMANT D.;MCDONALD, WILLIAM G.;SALIAN, ARVIND S. |
分类号 |
B81B3/00;B81C99/00 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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