发明名称 SUBSTRATE CONTACT FOR A CAPPED MEMS AND METHOD OF MAKING THE SUBSTRATE CONTACT AT THE WAFER LEVEL
摘要 A MEMS device ( 100 ) is provided that includes a handle layer ( 108 ) having a sidewall ( 138 ), a cap ( 132 ) overlying said handle layer ( 108 ), said cap ( 132 ) having a sidewall ( 138 ), and a conductive material ( 136 ) disposed on at least a portion of said sidewall of said cap ( 138 ) and said sidewall of said handle layer ( 138 ) to thereby electrically couple said handle layer ( 108 ) to said cap ( 132 ). A wafer-level method for manufacturing the MEMS device from a substrate ( 300 ) comprising a handle layer ( 108 ) and a cap ( 132 ) overlying the handle layer ( 108 ) is also provided. The method includes making a first cut through the cap ( 132 ) and at least a portion of the substrate ( 300 ) to form a first sidewall ( 138 ), and depositing a conductive material ( 136 ) onto the first sidewall ( 138 ) to electrically couple the cap ( 132 ) to the substrate ( 300 ).
申请公布号 EP1897122(A4) 申请公布日期 2013.12.25
申请号 EP20060773131 申请日期 2006.06.13
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 HOOPER, STEPHEN R.;DESAI, HEMANT D.;MCDONALD, WILLIAM G.;SALIAN, ARVIND S.
分类号 B81B3/00;B81C99/00 主分类号 B81B3/00
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