发明名称 |
Nitride-based semiconductor device and method for manufacturing the same |
摘要 |
Disclosed herein are a nitride-based semiconductor device and a method for manufacturing the same. The nitride-based semiconductor device includes: a base substrate having a front surface and a rear surface opposite to the front surface; an epitaxial growth film formed on the front surface of the base substrate; a semiconductor layer formed on the rear surface of the base substrate; and an electrode structure body provided on the epitaxial growth film. |
申请公布号 |
US8614464(B2) |
申请公布日期 |
2013.12.24 |
申请号 |
US201113049444 |
申请日期 |
2011.03.16 |
申请人 |
JEON WOOCHUL;PARK KIYEOL;PARK YOUNGHWAN;SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
JEON WOOCHUL;PARK KIYEOL;PARK YOUNGHWAN |
分类号 |
H01L27/148;H01L21/02;H01L29/66 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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