| 摘要 |
The semiconductor device in an embodiment of the present invention includes a substrate, a buffer layer on the substrate, a device layer including a doped semiconductor compound and arranged on the buffer layer, a first middle layer including an undoped semiconductor compound, applying a stress to the device layer, and arranged between the buffer layer and the device layer, and a second middle layer including AlyGa1-yN (here, 1 < y < 1), partly attenuating the stress from the first middle layer to the device layer, and arranged between the first middle layer and the device layer. [Reference numerals] (10) Substrate;(22) Initial buffer layer;(24) Transition layer;(30) First middle layer;(40) Second middle layer;(50) Device layer |
