发明名称 |
Shallow source and drain architecture in an active region of a semiconductor device having a pronounced surface topography by tilted implantation |
摘要 |
In sophisticated semiconductor devices, a shallow drain and source concentration profile may be obtained for active regions having a pronounced surface topography by performing tilted implantation steps upon incorporating the drain and source dopant species. In this manner, a metal silicide may be reliably embedded in the drain and source regions. |
申请公布号 |
US8614134(B2) |
申请公布日期 |
2013.12.24 |
申请号 |
US201113052583 |
申请日期 |
2011.03.21 |
申请人 |
GERHARDT MARTIN;JAVORKA PETER;FAUL JUERGEN;GLOBALFOUNDRIES INC. |
发明人 |
GERHARDT MARTIN;JAVORKA PETER;FAUL JUERGEN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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