METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND LASER ANNEALING DEVICE

摘要

Provided are a method for manufacturing a semiconductor device and a laser annealing device capable of performing high-quality annealing. A high concentration layer (57a) and a low concentration layer (56a) are activated by irradiating two type laser pulse to the surface of a semiconductor substrate (50) having the high concentration layer of an amorphous state, which high concentration impurities are injected to a shallow area, and the low concentration layer which the low concentration impurities are injected to an area which is deeper than the area of the high concentration layer. The low concentration layer is activated by a first laser pulse (LP1) without melting the high concentration layer. The high concentration layer is activated by receiving a second laser pulse (LP2) having the short pulse width and peak power which is higher than the peak power of the first laser pulse. The present invention is provided to perform the activation of the high concentration layer and the lower concentration layer, thereby not roughening the surface. [Reference numerals] (AA) Polish a copper film 107;(BB) Remove the cooper film 107;(CC) Remove a barrier film 105 + Polish a second hard mask film 104;(DD) Remove the second hard mask film 104 + Remove a first hard mask film 102 + Polish an inter-layer insulation film 101