发明名称 |
COMPOSITION AND PROCESS FOR SELECTIVELY ETCHING METAL NITRIDES |
摘要 |
A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme. |
申请公布号 |
KR20130139278(A) |
申请公布日期 |
2013.12.20 |
申请号 |
KR20137011711 |
申请日期 |
2011.10.06 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS INC. |
发明人 |
CHEN TIANNIU;THOMAS NICOLE E.;LIPPY STEVEN;BARNES JEFFREY A.;COOPER EMANUEL I.;ZHANG PENG |
分类号 |
C23F1/02;C23F1/44 |
主分类号 |
C23F1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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