SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

The present invention relates to a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer formed on the first conductive semiconductor layer, and a second conductive semiconductor layer; first and second electrodes connected to the first and second conductive semiconductor layers, respectively, wherein, in the light emitting structure, a portion of each of the active layer and the second conductive semiconductor layer is removed for a portion of the top surface of the first conductive semiconductor layer to be exposed, an upper portion of the exposed surface of the first conductive semiconductor layer has a downwardly slant lateral side, and the first electrode is formed on the exposed surface, within a region that does not overlap the slant lateral side from a view over the second conductive semiconductor layer. According to the present invention, light extraction efficiency of the semiconductor light emitting device can be improved and the semiconductor light emitting device can be manufactured in a convenient manner.