| 摘要 |
A light emitting device of an embodiment of the present invention includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second semiconductor layer; a first electrode layer disposed under the light emitting structure and contacting the second conductive semiconductor layer; a second electrode layer contacting the first conductive semiconductor layer by penetrating the first electrode layer, the second conductive semiconductor layer, and the active layer; a first insulation layer disposed between the electrode layer and the second electrode layer, between the second electrode layer and the second conductive semiconductor layer, and between the second electrode layer and the active layer; and at least one second insulation layer disposed between the first insulation layer and the first electrode layer, and covering a side portion of the first electrode layer, wherein thicknesses of the first and second insulation layers between the side portion of the first electrode layer and the second electrode layer are equal to or greater than the thicknesses of the first and second insulation layers between the top of the first electrode layer and the second electrode layer. |
