| 摘要 |
The invention relates to an optoelectronic semiconductor chip (100) comprising: a wiring layer (3) with a first electrically conductive contact layer (21) and a second electrically conductive contact layer (22); an insulation layer (5) formed using an electrically insulating material; and two optoelectronic semiconductor elements (7), each of said optoelectronic semiconductor elements (7) comprising an active region (73) provided to generate radiation. The insulation layer (5) is located on an upper side of the second electrically conductive contact layer (22), said side facing the optoelectronic semiconductor elements (7), the first electrically conductive contact layer (21) is located on an upper side of the insulation layer (5), said side facing away from the second electrically conductive contact layer (22) and the optoelectronic semiconductor elements (7) are electrically connected in parallel by means of the wiring layer (3). |
