发明名称 |
STRUCTURE AND METHOD FOR A COMPLIMENTARY RESISTIVE SWITCHING RANDOM ACCESS MEMORY FOR HIGH DENSITY APPLICATION |
摘要 |
The present disclosure provides a resistive random access memory (RRAM) structure. The RRAM structure includes a bottom electrode on a substrate; a resistive material layer on the bottom electrode, the resistive material layer including a defect engineering film; and a top electrode on the resistive material layer. |
申请公布号 |
US2013334486(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201213598378 |
申请日期 |
2012.08.29 |
申请人 |
TSAI CHUN-YANG;TING YU-WEI;HUANG KUO-CHING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAI CHUN-YANG;TING YU-WEI;HUANG KUO-CHING |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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