| 摘要 |
<p>A method is provided for controlling a projection exposure apparatus (10) for microlithography, embodied as a scanner, in the exposure operation, in which a reticle (40) is moved along a scanning axis with respect to a frame (42) of the projection exposure apparatus such that the reticle is scanned by an illumination field (60) radiated thereon, and the radiation (22) of the illumination field is guided onto a wafer (44) after interaction with the reticle in order to generate a desired dose distribution on said wafer. The method comprises the following steps: measuring positional changes of the illumination field (60) in the direction of the scanning axis with respect to the frame (42) of the projection exposure apparatus, and correcting the influence of a measured positional change of the illumination field on the dose distribution on the wafer (44) by modifying at least one operational parameter of the projection exposure apparatus (10).</p> |
