METHOD OF MANUFACTURING EPITAXIAL SILICON WAFER AND EPITAXIAL SILICON WAFER MANUFACTURED BY THE METHOD

摘要

A method of manufacturing an epitaxial silicon wafer including a silicon wafer having a surface added with phosphorus and an epitaxial film provided on the surface includes adjusting an in-plane thickness distribution of the epitaxial film formed on the surface of the silicon wafer based on an in-plane resistivity distribution of the silicon wafer before an epitaxial growth treatment.