发明名称 MEMORY BANDWIDTH AGGREGATION USING SIMULTANEOUS ACCESS OF STACKED SEMICONDUCTOR MEMORY DIE
摘要 A packaged semiconductor device includes a data pin, a first memory die, and a second memory die stacked with the first memory die. The first memory die includes a first data interface coupled to the data pin and a first memory core having a plurality of banks. The second memory die includes a second memory core having a plurality of banks. A respective bank of the first memory core and a respective bank of the second memory core perform parallel row access operations in response to a first command signal and parallel column access operations in response to a second command signal. The first data interface of the first die provides aggregated data from the parallel column access operations in the first and second die to the data pin.
申请公布号 US2013336039(A1) 申请公布日期 2013.12.19
申请号 US201313908973 申请日期 2013.06.03
申请人 RAMBUS INC. 发明人 FRANS YOHAN
分类号 G11C5/02 主分类号 G11C5/02
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