SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

A semiconductor structure and a method for forming the same are provide. The semiconductor structure comprises: a semiconductor substrate; a first epitaxial layer and a first insulation layer sequentially formed on a first region of a first surface of the semiconductor substrate; a second epitaxial layer and a second insulation layer sequentially formed on a second region of the first surface of the semiconductor substrate, a metal gate electrode is formed on the second insulation layer, at least one gate contact hole is formed in the second epitaxial layer and the second insulation layer, each gate lead-out trench is connected with the metal gate electrode via a corresponding gate contact hole, and the at least one gate lead-out trench, the metal gate electrode and the at least one gate contact hole form a gate region; and a drain region formed on a second surface of the semiconductor substrate.