| 摘要 |
A nitride semiconductor light emitting element (1) is provided with: a substrate (3); a buffer layer (5) that is provided on the substrate (3); a base layer (7) that is provided on the buffer layer (5); an n-side nitride semiconductor layer that is provided on the base layer (7); an MQW light emitting layer (14) that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer (14). An x-ray rocking curve half-value width (omega(004)) with respect to a (004) plane, i.e., the crystal plane of each of the layers constituting the nitride semiconductor light emitting element (1), is 40 arcsec or less, or the x-ray rocking curve half-value width (omega(102)) with respect to a (102) plane is 130 arcsec or less, and the rate P(80)/P(25) between light output (P(25)) at 25°C and light output (P(80)) at 80°C with a same operating current is 95% or more. |
