| 摘要 |
PROBLEM TO BE SOLVED: To achieve both a wide dynamic range and high picture quality at low temperatures in a solid state image sensor.SOLUTION: In a solid state image sensor 1 including a plurality of pixels 5 arranged in two dimensional form, each of the plurality of pixels 5 include an on-substrate photoelectric conversion element 20 formed on the upper part of a semiconductor substrate and an intra-substrate photoelectric conversion element 13 formed inside the semiconductor substrate below the on-substrate photoelectric conversion element 20. The intra-substrate photoelectric conversion element 13 and the on-substrate photoelectric conversion element 20 in each pixel detect light having the same color and have mutually different photoelectric conversion sensitivities for incident light impinging upon the pixel. A distance in the lamination direction between the intra-substrate photoelectric conversion element 13 and the on-substrate photoelectric conversion element 20 in each pixel, d, is 1.5 μm to 4 μm, both ends inclusive. |
