发明名称 SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF
摘要 A semiconductor structure is located in a recess of a substrate. The semiconductor structure includes a liner, a silicon rich layer and a filling material. The liner is located on the surface of the recess. The silicon rich layer is located on the liner. The filling material is located on the silicon rich layer and fills the recess. Furthermore, a semiconductor process forming said semiconductor structure is also provided.
申请公布号 US2013334650(A1) 申请公布日期 2013.12.19
申请号 US201213517573 申请日期 2012.06.13
申请人 LIU CHIH-CHIEN;CHANG CHIA-LUNG;CHEN JEI-MING;LEE JUI-MIN;LIN YUH-MIN 发明人 LIU CHIH-CHIEN;CHANG CHIA-LUNG;CHEN JEI-MING;LEE JUI-MIN;LIN YUH-MIN
分类号 H01L29/06;H01L21/302 主分类号 H01L29/06
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