发明名称 |
SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF |
摘要 |
A semiconductor structure is located in a recess of a substrate. The semiconductor structure includes a liner, a silicon rich layer and a filling material. The liner is located on the surface of the recess. The silicon rich layer is located on the liner. The filling material is located on the silicon rich layer and fills the recess. Furthermore, a semiconductor process forming said semiconductor structure is also provided. |
申请公布号 |
US2013334650(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201213517573 |
申请日期 |
2012.06.13 |
申请人 |
LIU CHIH-CHIEN;CHANG CHIA-LUNG;CHEN JEI-MING;LEE JUI-MIN;LIN YUH-MIN |
发明人 |
LIU CHIH-CHIEN;CHANG CHIA-LUNG;CHEN JEI-MING;LEE JUI-MIN;LIN YUH-MIN |
分类号 |
H01L29/06;H01L21/302 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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