发明名称 METHOD FOR IMPROVED TESTING OF TRANSISTOR ARRAYS
摘要 An electronic test system to evaluate the pixel and array properties of active-matrix displays that use charge or current sensitive circuits attached to the array data lines is described. Leakage-current, charging time, and other metrics can be measured for all pixels in the array without electrical or optical connection to the interior of the array. Charge or current sensitive amplifiers and selected voltage drivers may be used in conjunction with variable timing and voltages to determine individual transistor properties over an entire array in just a few seconds. Signals to be measured may be injected in several ways. Ultimately, an output signal for each pixel is measured. Thus, based on the output signal, the charging time or current, the leakage time or current, and other pixel or transistor parameters may be characterized for the entire array.
申请公布号 US2013335113(A1) 申请公布日期 2013.12.19
申请号 US201313969312 申请日期 2013.08.16
申请人 PALO ALTO RESEARCH CENTER INCORPORATED 发明人 APTE RAJ B.
分类号 G09G3/00 主分类号 G09G3/00
代理机构 代理人
主权项
地址