发明名称 QUANTUM CASCADE SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To provide a quantum cascade semiconductor laser having a structure capable of suppressing a higher mode in a waveguide mode in horizontal direction.SOLUTION: In a quantum cascade semiconductor laser 11, a first semiconductor layer 19 in an embedded region 15, has a side part 19a contacting with a mesa waveguide 13, and a bottom part 19b contacting with a supporting substrate main surface 21a, and the first semiconductor layer 19 contains a p-type semiconductor. A second semiconductor layer 17 has a semi-insulating semiconductor. Leaking light component is absorbed and attenuated in the dopant in the semiconductor, because a semiconductor layer in the embedded region 15 contains the dopant. Therefore the above structure of the embedded region 15 hardly attenuates a fundamental transverse mode, and selectively attenuates a higher transverse mode. As a result, when a current is increased, the higher mode oscillation can be effectively suppressed, and a laser oscillation of the fundamental transverse mode can be stably achieved to a high current range.
申请公布号 JP2013254908(A) 申请公布日期 2013.12.19
申请号 JP20120131100 申请日期 2012.06.08
申请人 SUMITOMO ELECTRIC IND LTD 发明人 HASHIMOTO JUNICHI;KATO TAKASHI;INADA HIROSHI;MURATA MICHIO
分类号 H01S5/227;H01S5/34 主分类号 H01S5/227
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