发明名称 |
N-CHANNEL AND P-CHANNEL END-TO-END FINFET CELL ARCHITECTURE WITH RELAXED GATE PITCH |
摘要 |
A finFET block architecture uses end-to-end finFET blocks in which the fin lengths are at least twice the contact pitch, whereby there is enough space for interlayer connectors to be placed on the proximal end and the distal end of a given semiconductor fin, and on the gate element on the given semiconductor fin. A first set of semiconductor fins having a first conductivity type and a second set of semiconductor fins having a second conductivity type can be aligned end-to-end. Interlayer connectors can be aligned over corresponding semiconductor fins which connect to gate elements. |
申请公布号 |
US2013334610(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201213495810 |
申请日期 |
2012.06.13 |
申请人 |
MOROZ VICTOR;SHERLEKAR DEEPAK D.;SYNOPSYS, INC. |
发明人 |
MOROZ VICTOR;SHERLEKAR DEEPAK D. |
分类号 |
H01L27/092;G06F17/50;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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