| 摘要 |
The present invention relates to a semiconductor device, more particularly a nitride semiconductor light emitting device comprising: a substrate; a first conductive semiconductor layer disposed on the substrate; an active layer disposed on the first conductive semiconductor layer; a second conductive contact layer disposed on the active layer and acting as a current diffusion layer; a transparent electrode disposed on the contact layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode disposed on the transparent electrode. |
