发明名称 Biasing system and method
摘要 Embodiments are provided that include a memory system that includes a memory system, having an access device coupled between a global line and a local line and a voltage source coupled to the global line and configured to output a bias voltage on the global line when the memory system is in a non-operation state. The access device is selected when the memory system is in the non-operation state, and the access device is deselected when the memory system is in an other state. Further embodiments provide, for example, a method that includes coupling a global access line to a local access line, biasing the local access line to a voltage other than a negative supply voltage while a memory device is in a first state and uncoupling the global access line from the local access line while the memory device is in an other state.
申请公布号 US8611153(B2) 申请公布日期 2013.12.17
申请号 US201213399739 申请日期 2012.02.17
申请人 TANZAWA TORU;MICRON TECHNOLOGY, INC. 发明人 TANZAWA TORU
分类号 G11C16/04 主分类号 G11C16/04
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