| 摘要 |
One method includes forming a metal-containing material layer in a trench/via formed in a layer of insulating material, forming a sacrificial material layer above the metal-containing material layer to over-fill the trench/via with the sacrificial material, performing at least one process operation to remove portions of the metal-containing material layer and the sacrificial material layer positioned above an upper surface of the layer of insulating material and outside of the trench/via, removing the sacrificial material from within the trench/via to expose the metal-containing material layer positioned within the trench/via, selectively forming a material layer comprising a noble metal on the exposed metal-containing material without forming the material layer on the layer of insulating material, performing an anneal process to convert the metal-containing material layer into a metal-based silicate based barrier layer and forming a conductive copper structure in at least the trench/via above the material layer comprising the noble metal. |
